Electron‐beam penetration in GaAs

摘要

Measurements of the primary electron‐beam penetration depth R in single‐crystal GaAs have been made over the electron‐beam energy range of 3–17 kV. The penetration depth is defined as the GaAs film thickness at which primary electrons of a given energy Ep just begin to emerge from the exit surface of the film with an energy of several hundred eV. The relationship between R and Ep is R=a(Ep)b μm, with a=0.027±0.003 and b=1.46±0.05. Ep is given in kV.