Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs_(1_X)N_X intercalated GaAs/GaAs_(1-x)N_x:H heterostructures

摘要

Hydrogen incorporation in diluted nitride semiconductors dramatically modifies the electronic and structural properties of the crystal through the creation of nitrogen-hydrogen complexes. We report a convergent beam electron-diffraction characterization of diluted nitride semiconductor-heterostructures patterned at a sub-micron scale and selectively exposed to hydrogen. We present a method to determine separately perpendicular mismatch and static disorder in pristine and hydrogenated heterostructures. The roles of chemical composition and strain on static disorder have been separately assessed.