Effects of composition profile on characteristics of GaAsGa1-xAlxAs double‐heterostructure lasers

摘要

Electron probe x‐ray microanalysis was used to measure the composition profile in the active layers of GaAsGa1-xAlxAs double‐heterostructure wafers along the growth direction. The threshold current density and the lasing wavelength of the double‐heterostructure laser were found to be consistently affected by the composition profile in the active layer.