Scattering of charge carriers in silicon surface layers

摘要

The mobility of free carriers in a surface layer of a silicon metal‐oxide‐semiconductor transistor has been computed theoretically. It represents the first realistic approach which attempts to combine Coulomb, phonon, and surface‐roughness scattering to account for the mobility behavior over different temperatures and applied fields. An over‐all semiquantitative agreement between theory and experiment is obtained for both the channel mobility and magnetoresistance effect.