Characteristics of infrared photodetectors produced by radiation doping

摘要

High‐energy electrons (≈7 MeV) were used to radiation dope extrinsic silicon. Both n‐ and p‐type silicon photodetectors were fabricated using this doping technique. The 500°K blackbody responsivity, spectral response, and peak detectivity were determined for these devices. The peak detectivity values measured were 4.8×1011 cm Hz1/2 W-1 at 2.15 μ for 0.1‐Ω cm n‐type devices and 3.7×1011 cm Hz1/2 W-1 at 40 μ for 10‐Ω cm p‐type detectors. A comparison of the thermally generated background majority carrier concentration for radiation‐doped and conventional impurity‐doped detectors is made.