Photoconductivity in solution‐grown copper‐doped GaP

摘要

High‐resistivity copper‐doped GaP has been prepared by solution growth from a copper‐doped gallium melt. Photoconductive effects have been studied in these crystals. Compared to previously reported results these crystals are characterized by (i) high sensitivity at lower light levels, (ii) faster response time, and (iii) extended short‐wavelength spectral response.