Mobility of electrons in Hg1-xCdxTe

摘要

Electron mobility in semiconducting Hg1-xCdxTe at room temperature has been calculated in the range 0.2 ≤ x ≤ 1.0 by an iterative solution of the Boltzmann equation incorporating the two‐mode nature of the polar optical scattering and the nonparabolicity of the conduction band. The effects of the deformation potential acoustic, ionized impurity, and electron‐hole scattering have also been considered. The calculated results agree with the measured values to within a factor of 2 for x = 0.6 and 0.4, whereas for x = 0.2, 0.8, and 1.0 the agreement is within a factor of 1.4.