Preparation and properties of CdSnP2/InP heterojunctions grown by LPE from Sn solution

摘要

Heterojunctions of n‐type CdSnP2 on p‐type InP substrates have been prepared by LPE from Sn solutions. The tipping arrangement, solution composition, and temperature program for the preparation of high‐quality LPE layers are described. Heterodiodes prepared from such LPE wafers electroluminesce under forward bias at wavelengths near 1.6 μ with internal quantum efficiencies approaching 2% at room temperature. When used as photovoltaic detectors, the quantum efficiency of these diodes surpasses that of Si for λ≫1.09 μ and exceeds 1% for all wavelengths between 0.96 and 1.3 μ.