Gallium arsenide p+‐ν diodes under hydrostatic pressure

摘要

The current‐voltage characteristics of GaAs p+‐ν relaxation‐case diodes are investigated at hydrostatic pressure up to 18 kbar. The results eliminate an explanation of the controversial sublinear forward characteristics by means of a valley‐transfer mechanism but do not disagree with the model of majority‐electron depletion caused by hole injection.