Electron-irradiation-induced damage recovery effects in lightly doped n- and p-type α-tin

摘要

The recovery of the electrical resistivity and thermoelectric power in a number of n- and p-type α-tin samples, irradiated at low temperature, is considered. Three distinct first-order stages in the temperature range 20-50 K are observed. A fractional defect recovery has been deduced such that relative percentages of IA : IB : IC=90 : 4 : 6 anneal in the three stages. Activation energy scaling factors were found to be 69, 94, and 122 meV, respectively, for the three stages. Carrier mobilities as functions of carrier and defect concentration were calculated and found to be in good agreement with previously published values. Estimates for these quantities were also deduced when the samples were near to their intrinsic states (ne∼nh). A close-pair-defect charge carrier trapping model provides a consistent explanation for all damage and recovery data.