Complementary MOS image sensor, for e.g. mobile camera, has lightly and strongly doped impurity regions arranged at sides of electrode, and third impurity region of p-type provided with p-type impurity ions e.g. boron ions, in trench region

摘要

An image sensor has a semiconductor substrate (101) defining a photodiode region, transistor regions of p-type and n-type, a field region and a blank trench region. A component isolation film (102) is formed on the field region, and a gate electrode (109) is formed on the transistor regions. Lightly doped impurity regions (111, 113) and strongly doped impurity regions (116, 118) of respective p and n-types are arranged at both sides of the gate electrode. A third impurity region of the p-type is provided with strongly doped p-type impurity ions such as boron ions, in the blank trench region. An independent claim is also included for the manufacture of a complementary MOS (CMOS) image sensor.