GaAs double heterostructure lasers fabricated by wet chemical etching

摘要

GaAs double heterostructure lasers compatible with monolithic intergration of optical devices have been fabricated by wet chemical etching. Results for a variety of laser orientations are reported. External differential quantum efficiencies as high as 18% have been achieved, as well as threshold current densities as low as 4.2 kA/cm2. An analysis for the evaluation of etched‐mirror properties is presented. Using this analysis, it was found that etched mirrors had reflectivity R?0.22±0.05 and scattering losses S=0.3±0.1.