Control of zinc diffusivity in GaAs0.6P0.4 by multiple implantation

摘要

Experimental data is presented to show that the diffusion of ion‐implanted Zn in GaAs0.6P0.4 can be effectively controlled by the coimplantation of Ga, As, and/or P prior to annealing. The experimental observations are shown to be consistent with the interstitial‐substitutional diffusion mechanism for Zn diffusion in III‐V semiconductors. This diffusion model is modified to include the effects of Ga, As, or P implants on the Ga vacancy concentration dependence of Zn diffusivity. Coimplantation of B or N with Zn does not affect the diffusion of the Zn the way Ga, As, or P coimplantation does.