Spatially varied activation of ion‐implanted As during the regrowth of amorphous layers in Si

摘要

He backscattering technique and sheet‐resistivity measurements show that the electrical activation of As implanted in (100) and (111) Si and annealed at relatively low temperatures (500–600 °C) takes place from the vicinity of the crystalline substrate Si in the As profile. This is accompanied by the regrowth of the implantation‐induced amorphous layer. The annealing temperature required for both the activation and the regrowth is dose dependent. No defect‐induced diffusion of As has been observed in these annealing processes.