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首页> 外文期刊>Journal of Applied Physics >Effects of substrate bias and annealing on the properties of amorphous alloy films of Gd‐Co, Gd‐Fe, and Gd‐Co‐X (X=Mo,Cu,Au)
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Effects of substrate bias and annealing on the properties of amorphous alloy films of Gd‐Co, Gd‐Fe, and Gd‐Co‐X (X=Mo,Cu,Au)

机译:衬底偏压和退火对Gd-Co,Gd-Fe和Gd-Co-X(X = Mo,Cu,Au)非晶合金膜性能的影响

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We have examined the dependence of various properties of sputter‐deposited amorphous GdCo, GdFe, and GdCoX (X=Mo,Cu,Au) films upon substrate bias and annealing. Particular interest was directed to changes in magnetization, anisotropy, composition, x‐ray diffraction patterns, and Ar content of the films. In the case of the binary films, we applied substrate bias voltages to 400 V. We found that for the GdCo system, Ku rises with increasingly negative bias voltage to about Vb=-200 V. Further increases in Vb cause Ku to decrease, so that Ku?0 for Vb?-400 V. Furthermore, it was found that the Ar content of the films tends to correlate with Vb, reaching a maximum for Vb?-200 V. X‐ray diffraction patterns of these films also appear to correlate with Ku but in a more subtle manner than has been suggested by other workers. The results for amorphous GdFe films were considerably different. In particular, it was found that Ku was large for Vb?0 but decreased rapidly with negative bias. The behavior of ternary GdCoX films was similar to that of the binary GdCo films, except that the x‐ray diffraction patterns showed little dependence on Vb. On being annealed for 4 h at 200 °C, the binary films show no change in magnetization, composition, or x‐ray diffraction profile, but do experience a decrease in Ku by about a factor of 2. The situation is similar for the GdCoCu and GdCoAu films except that the temperature dependence of the magnetization also changes dramatically. In contrast to these results, amorphous GdCoMo films undergo little or no change on annealing. Our results suggest that the incorporation of Ar into the films is closely related to the mechanism responsible for Ku in these materials; however, there exist data which conflict with this interpretation, so that the-n origin of Ku remains in doubt. On the other hand, we have established the limits to the effects of Vb on the material’s properties, and we present a comprehensive collection of empirical facts which will prove useful for preparing this class of materials with desired properties.
机译:我们检查了溅射沉积的非晶态GdCo,GdFe和GdCoX(X = Mo,Cu,Au)薄膜的各种特性对衬底偏置和退火的依赖性。特别关注的是薄膜的磁化强度,各向异性,组成,x射线衍射图和Ar含量的变化。在二元膜的情况下,我们将衬底偏置电压施加到400V。我们发现,对于GdCo系统,Ku随着负偏置电压的增加而上升到大约Vb = -200V。Vb的进一步增加导致Ku减小,因此Vb?-400 V的Ku?0。此外,发现薄膜中的Ar含量倾向于与Vb相关,对于Vb?-200 V达到最大值。这些薄膜的X射线衍射图也显示出与Ku相关,但比其他工人建议的更微妙。非晶态GdFe薄膜的结果差异很大。特别地,发现对于Vb≥0,Ku很大,但是随着负偏压而迅速减小。三元GdCoX薄膜的行为与二元GdCo薄膜的行为相似,不同之处在于X射线衍射图对Vb的依赖性很小。在200°C下退火4小时后,二元膜的磁化强度,成分或x射线衍射图没有变化,但是Ku降低了约2倍。GdCoCu的情况类似GdCoAu和GdCoAu膜的不同之处在于磁化的温度依赖性也发生了巨大变化。与这些结果相反,非晶态GdCoMo膜在退火时几乎没有变化。我们的结果表明,将Ar掺入薄膜中与这些材料中引起Ku的机理密切相关。但是,由于存在与该解释相矛盾的数据,因此对Ku的-n起源尚有疑问。另一方面,我们已经建立了Vb对材料性能影响的限制,并且我们提供了一系列经验事实,这些事实对于制备具有所需性能的此类材料非常有用。

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    《Journal of Applied Physics 》 |1978年第1期| P.366-375| 共10页
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  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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