Semiconductor Raman laser

摘要

The semiconductor Raman laser has been realized by using a GaP crystal. Pumping is made by a Q‐switched YAG laser operating at 1.064 μm. The round‐trip loss in the Fabry‐Perot resonator is 2% or less. The Raman scattering from LO phonons stimulates in the 〈100〉 direction, while the forward and backward Raman scattering from TO phonons stimulate in the 〈110〉 direction. This semiconductor Raman laser is promising as a semiconductor far‐infrared radiation source.