κ=(1/τ)×(1−R1)×(R2/R1)1/2 (1)"/>
Method of designing semiconductor laser device, method of designing raman amplifier, methods of manufacturing semiconductor laser device, semiconductor laser device, raman amplifier, and optical communication system
首页>
外国专利>
Method of designing semiconductor laser device, method of designing raman amplifier, methods of manufacturing semiconductor laser device, semiconductor laser device, raman amplifier, and optical communication system
Method of designing semiconductor laser device, method of designing raman amplifier, methods of manufacturing semiconductor laser device, semiconductor laser device, raman amplifier, and optical communication system
A method of designing a semiconductor laser device includes: controlling a distance between the output-side reflection unit and the second reflection unit and an effective optical feedback κ to the semiconductor laser element, the effective optical feedback κ defined by a below-presented formula (1) including a circulating time τ of the light in the semiconductor laser element, a reflectivity R1 of the output-side reflection unit, and a reflectivity R2 of the second reflection unit; selecting a semiconductor laser device in which an LFF period is equal to or smaller than 20 ns as a semiconductor laser device in which high speed switching occurs between an FBG mode and an FP mode; and using the selected semiconductor laser device as an semiconductor laser device oscillating in a coherent collapse mode.κ=(1/τ)×(1−R1)×(R2/R1)1/2 (1)
展开▼
机译：设计半导体激光装置的方法包括：控制输出侧反射单元和第二反射单元之间的距离以及对半导体激光元件的有效光反馈κ，该有效光反馈κ由下式（ 1）包括半导体激光器元件中光的循环时间τ，输出侧反射单元的反射率R 1 和第二反射面的反射率R 2 反射单元选择LFF周期等于或小于20ns的半导体激光器件作为其中在FBG模式和FP模式之间发生高速切换的半导体激光器件;使用所选择的半导体激光装置作为以相干塌陷模式振荡的半导体激光装置。<？in-line-formulae description =“在线表达式” end =“ lead”？>κ=（1 /τ）×（1- R 1 ） ×（ R 2 / R 1 ） 1/2 （1）< ？in-line-formulae description =“在线公式” end =“ tail”？>
展开▼
