Determination of band‐gap parameters of Hg1-xCdxTe based on high‐temperature carrier concentration

摘要

The temperature dependence of the carrier concentration of Hg1-xCdx Te at elevated temperatures is used to determine its band parameters near the bandedge. The electron concentration is calculated by using the Kane model (k∙p method), and is fit to observed values derived from measurements of the Hall coefficient in the near‐intrinsic region. This procedure results in expressions for the following parameters: the band‐gap Eg and its dependence on temperature and composition; Kane’s interband‐coupling matrix element and the heavy‐hole effective mass ratio. Modified values of the intrinsic carrier concentration are calculated using these parameters.