Growth solution baking effects on the residual impurities in GaAs liquid‐ phase‐epitaxy layers

摘要

Unintentionally doped liquid phase epitaxial GaAs layers have been grown from different Ga solutions baked for times between 6 and 48 h. From photoluminescence measurements C and Si have been identified as the main residual impurities. Hall‐effect measurements show a reduction of the overall impurity concentration and an increase of the compensation ratio with the baking time. The combination of photoluminescence and Hall‐effect results suggests a decrease of the contamination by carbon and probably by silicon of the grown layers as the duration of the heat treatment increases.