Schottky barrier height variations on the polar (111) faces of n‐GaP

摘要

Current‐voltage, capacitance‐voltage, and photoresponse measurements have been reexamined on the polar Ga‐(111)A and P‐(∼(111)) B surfaces of n‐GaP for reactive (Al) and nonreactive (Ag) metals. Using a chemical etching/in vacuo desorption cleaning sequence, nearly oxide‐free A and B faces could be obtained. For diodes formed on such surfaces, the intrinsic, face‐dependent variation in A and B Schottky barrier heights was less than 30 meV.