Injection‐enhanced annealing of InP solar‐cell radiation damage

摘要

This paper demonstrates that minority‐carrier injection due to forward bias and light illumination under low current density and short‐time injection conditions at room temperature can lead to enhanced recovery of radiation‐induced defects in p‐InP and radiation damage in InP n+‐p junction solar cells. Deep‐level transient spectroscopy analysis shows that the major defect centers H4 (EV +0.37 eV) and E2 (EC -0.19 eV) in p‐InP exhibit injection‐enhanced annealing which is a recombination‐enhanced effect with a reduced activation energy of 0.133 eV. The marked recovery of the InP n+‐p solar‐cell radiation damage due to minority‐carrier injection mainly results from recovery in minority‐carrier diffusion length and decrease in recombination current. These mainly originate from the annihilation of the major defect centers H4 and E2 in the p‐InP layer due to injection.