Photoluminescence Analysis of Injection-Enhanced Annealing of Electron Irradiation-Induced Defects in GaAs Middle Cells for Triple-Junction Solar Cells

著录项

• 来源
  《中国物理快报：英文版》 |2016年第5期|67-70|共4页
• 作者

  Yong Zheng; Tian-Cheng Yi; Peng-Fei Xiao; Juan Tang; Rong Wang;

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• 作者单位

  Key Laboratory of Beam Technology and Materials Modification of Ministry of Education,College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875;

  Key Laboratory of Beam Technology and Materials Modification of Ministry of Education,College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875;

  Key Laboratory of Beam Technology and Materials Modification of Ministry of Education,College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875;

  Key Laboratory of Beam Technology and Materials Modification of Ministry of Education,College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875;

  Key Laboratory of Beam Technology and Materials Modification of Ministry of Education,College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875;

  Beijing Radiation Center, Beijing 100875;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词