Spin‐ and angle‐resolved photoemission study of bcc‐Co films grown on (110) GaAs by molecular beam epitaxy

摘要

The recent success in preparing single‐crystal (110) films of metastable bcc‐phase Co by molecular beam epitaxy on GaAs has permitted spin‐ and angle‐resolved photoemission studies to be carried out on this material. These studies confirm the theoretical predictions from recent FLAPW calculations of the electronic band structure of bcc‐Co and bcc‐Fe. The two band structures are essentially the same, except that the Fermi level for Co is shifted relative to that of Fe due to the additional electron per atom. A significant portion of the increased minority electron density occurs in the Γ‐Σ‐N region of the Brillouin zone investigated here.