Characterization of GaAs and Si by a microwave photoconductance technique

摘要

A nondestructive microwave photoconductance technique has been employed to investigate the uniformity of electrical transport properties in semi‐insulating, doped, or implanted GaAs. Although the measurement time is increased, the technique is also applicable to Si. A review of the advantages and limitations is discussed and some example applications to a variety of GaAs and Si structures are presented.