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Effects of rf bias on the superconducting and structural properties of rf magnetron sputtered NbN

机译:射频偏压对射频磁控溅射NbN超导和结构性能的影响

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The superconducting and structure properties of rf magnetron sputtered NbN films prepared at elevated substrate temperatures were investigated as a function of rf substrate bias. The superconducting transition temperature was observed to be independent of bias up to approximately -60 V after which it decreased and broadened. An increase of up to 60% in deposition rate over the unbiased case was observed. Substrate bias produced little effect on the low‐temperature resistivity, resistivity ratio, and the film composition. The major structure change observed was a strong dependence of the preferred crystallite orientation on bias. At low bias the orientation was (200) which changed to (111) as the bias was increased. These materials are of excellent quality for use in all refractory tunnel junctions.
机译:研究了在升高的衬底温度下制备的射频磁控溅射NbN薄膜的超导和结构特性,它是射频衬底偏压的函数。观察到超导转变温度与高达约-60 V的偏压无关,此后温度降低并变宽。观察到在无偏的情况下沉积速率增加了高达60%。基板偏压对低温电阻率,电阻率比和膜组成影响不大。观察到的主要结构变化是优选的微晶取向对偏压的强烈依赖性。在低偏置下,方向为(200),随着偏置的增加,方向变为(111)。这些材料具有极好的质量,可用于所有耐火隧道结。

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    《Journal of Applied Physics 》 |1986年第8期| P.2905-2907| 共3页
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  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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