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RF SUBSTRATE BIAS WITH HIGH POWER IMPULSE MAGNETRON SPUTTERING (HIPIMS)
RF SUBSTRATE BIAS WITH HIGH POWER IMPULSE MAGNETRON SPUTTERING (HIPIMS)
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机译:具有高功率脉冲磁控溅射(HIPIMS)的RF基板偏置
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摘要
An apparatus for generating sputtering of a target to produce a coating on a substrate with a current density on a cathode of a magnetron between 0.1 and 10 A/cm2 is provided. The apparatus comprises a power supply that is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias.
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机译:提供了一种用于产生靶的溅射的设备,以在磁控管的阴极上以0.1至10A / cm 2的电流密度在基板上产生涂层。该设备包括可操作地连接到磁控管的电源,并且至少一个电容器可操作地连接到电源。还提供了第一开关。第一开关可操作地将电源连接至磁控管以对磁控管充电,并且第一开关被配置为根据第一脉冲对磁控管充电。电偏压装置可操作地连接到基板并被配置为施加基板偏压。
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