Band parameters of GaAs, InAs, InP, and InSb in the 40-band k∙p model

摘要

A 40-band k∙p model is used to compute the standard k∙p band parameters at Γ, X, and L valleys in direct-band-gap bulk materials for Td group semiconductors. The values of the effective masses for electrons, heavy holes, and light holes in the Γ, X, and L valleys are in good agreement with those reported in other publications. Satisfactory agreement with available experimental data is also obtained by the present model. Finally, our results show that the effective Landé factor g*, the κ valence band parameter, and the Dresselhauss spin-orbit coupling constant δ conicide well with available experimental data. The k∙p Hamiltonian parameters, in particular, are adjusted to get g*(GaAs)=-0.42, which turn out to be in agreement with the experimental value of -0.44.