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首页> 外文期刊>Journal of Applied Physics >Effects of spacer thickness on perpendicular anisotropy L10-FePt/TiN/L10-FePt pseudo spin valves
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Effects of spacer thickness on perpendicular anisotropy L10-FePt/TiN/L10-FePt pseudo spin valves

机译:垫片厚度对垂直各向异性L10-FePt / TiN / L10-FePt假自旋阀的影响

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摘要

Pseudo spin valves (PSVs) with the structure MgO substrate/L10-Fe50Pt50/TiN/L10-Fe50Pt50 were fabricated with varying TiN spacer thickness from 3 to 7 nm. The giant magnetoresistance (GMR) reached a maximum before diminishing with increasing TiN spacer thickness. The initial enhancement of the GMR was attributed to the reduction in interlayer coupling between the L10-FePt layers. However, a decline in GMR sets in when the current shunting effects negated the enhancement brought about by the improved decoupling. Magnetostatic coupling was the primary source of interlayer coupling in the PSVs. The dependence of interlayer coupling on the remanent state of the hard L10-FePt was also examined based on the magnitude and direction of shift in the center of the minor hysteresis loop. While magnetostatic coupling was present in fully saturated hard L10-FePt, dipolar stray field coupling contributed more significantly to the interlayer coupling strength in partially saturated hard L10-FePt. The stray field coupling strength depended on both the thickness of the spacer and the density of the reversed domains in the hard L10-FePt.
机译:制作具有MgO基板/ L10-Fe50Pt50 / TiN / L10-Fe50Pt50结构的伪自旋阀(PSV),其TiN间隔层厚度在3至7nm之间变化。随着TiN间隔层厚度的增加,巨磁阻(GMR)在减小之前达到最大值。 GMR的最初增强归因于L10-FePt层之间层间耦合的减少。但是,当当前的分流效果抵消了改善的去耦带来的增强效果时,GMR就会下降。静磁耦合是PSV中层间耦合的主要来源。还根据次磁滞回线中心的位移幅度和方向检查了层间耦合对硬质L10-FePt剩磁状态的依赖性。虽然在完全饱和的硬质L10-FePt中存在静磁耦合,但是偶极杂散场耦合对部分饱和的硬质L10-FePt中的层间耦合强度有更大的贡献。杂散场耦合强度取决于间隔物的厚度以及硬质L10-FePt中反向畴的密度。

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  • 来源
    《Journal of Applied Physics》 |2012年第8期|p.1-8|共8页
  • 作者

    Ho P.;

  • 作者单位
  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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