perpendicular magnetic anisotropy spin valve MRAM memory device and using a magnetoresistive element

摘要

A memory device and MRAM(Magnetorresistive Random Access Memory) are provided, which remarkably reduce the power consumption for inscribe by using the multi-layered thin film of the Pd layer ferromagnetic layer or the ferromagnetic layer/Pd layer. A memory device comprises magnetic reluctance elements(1,2) and magnetic field generation unit(900). The magnetic reluctance element has the spin valve type. The magnetic reluctance element comprises the free layer, the nonmagnetic layer, the pinned layer, and the anti- ferroelectric material layer. The Pd layer/the first ferromagnetic layer or the first ferromagnetic layer/Pd layer is repetitively deposited to each free layer and pinned layer. The first ferromagnetic layer is magnetized perpendicularly on the side of the Pd layer.