Origins of electrostatic potential wells at dislocations in polycrystalline Cu(In,Ga)Se2 thin films

摘要

Thin-film solar cells based on Cu(In,Ga)Se2 (CIGSe) reach high power-conversion efficiencies in spite of large dislocation densities of up to 1010–1011 cm−2. The present work gives insight into the structural and compositional properties of dislocations in CIGSe thin films, which are embedded in a complete solar cell stack. These properties are related to the average electrical potential distributions obtained by means of inline electron holography. At a part of the dislocations studied, the average electrostatic potential shows local minima, all with depths of about −1.4 V. The measured average electrostatic potential distributions were modeled in order to reveal possible influences from strain fields, excess charge, and also compositional changes at the dislocation core. Cu depletion around the dislocation core, as evidenced by atom-probe tomography, explains best the measured potential wells. Their influences of the strain field around the dislocation core and of excess charge at the dislocation core are small. A structural model of dislocations in CIGSe thin films is provided which includes a Cu-depleted region around the dislocation core and gives a possible explanation for why decent photovoltaic performances are possible in the presence of rather large dislocation densities.