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Development of a model for evaluating propagation loss of metal-coated dielectric terahertz waveguides

机译:一种评价金属涂层电介质太赫兹波导的传播损失模型的研制

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摘要

A simple physical model for evaluating propagation loss of a metal-coated dielectric terahertz (THz) waveguide with different metal film thicknesses was developed for those fabricated by three-dimensional printing and film coating techniques. Our model enables a comprehensive understanding of the propagation loss mechanism and two key values: the critical film thickness to behave like the bulk material and loss in a sufficiently thick film. To develop the model, in addition to reflection at the metal-dielectric interface, the thickness-dependent electrical conductivity of the metal film was considered. The model was validated by an in-house multi-channel Au-coated THz parallel-plate waveguide in the lowest transverse-electric mode. The estimated critical thickness of our Au film was 171-207 nm at 0.72-1.4 THz. Our model clarified the contribution of three loss components to the overall loss: penetration loss, ohmic loss by bulk conductivity, and ohmic loss by a decrease in conductivity due to thin-film effects. Evaluation of loss over a broader frequency range (0.03-3.0 THz), which corresponds to fifth- to sixth-generation mobile network, revealed that the critical thickness decreased by up to 1.0 THz but increased above this range due to the transition of the dominant loss component from penetration loss to ohmic loss by a decrease in conductivity. As all three loss components and the critical thickness depend on film quality, a deposition process to yield high-quality films is necessary for high-performance waveguides. Our model is applicable to various waveguides, including rectangular waveguides, at any frequency and with any metal film.
机译:为通过三维印刷和薄膜涂层技术制造的那些开发了一种用于评估金属涂覆介质太赫兹(THz)波导的传播损耗的简单物理模型。我们的模型可以全面地了解传播丢失机制和两个关键值:表现得像散装材料的临界膜厚度和足够厚的薄膜。为了开发模型,除了在金属介质界面的反射之外,考虑了金属膜的厚度依赖性电导率。通过内部多通道Au涂覆的THz平行板波导以最低横电电动模式验证该模型。我们的Au薄膜的估计临界厚度为171-207nm,0.72-1.4至4至4至4至4 rm。我们的模型阐明了三个损失组分对整体损失的贡献:渗透损失,通过薄膜效应导电性降低的散装电导率欧姆损失和欧姆损失。评估更广泛的频率范围(0.03-3.0THz)的损失,它对应于第五到第六代移动网络,揭示了临界厚度高达1.0 thz,但由于主导的过渡,由于优势的过渡,高于该范围内通过导电性降低,从渗透损失到欧姆损失的损失组分。随着所有三个损耗部件和临界厚度取决于胶片质量,为高性能波导需要沉积工艺以产生高质量薄膜。我们的模型适用于各种波导,包括任何频率和任何金属膜的矩形波导。

著录项

  • 来源
    《Journal of Applied Physics》 |2021年第5期|055104.1-055104.15|共15页
  • 作者单位

    Department of Materials Engineering The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-8656 Japan;

    Institute for Photon Science and Technology The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-0033 Japan;

    Department of Materials Engineering The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-8656 Japan;

    Department of Materials Engineering The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-8656 Japan;

    Institute for Photon Science and Technology The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-0033 Japan Department of Physics The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-0033 Japan;

    Institute for Photon Science and Technology The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-0033 Japan Department of Physics The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-0033 Japan;

    Department of Materials Engineering The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-8656 Japan;

    Department of Materials Engineering The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-8656 Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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