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首页> 外文期刊>Journal of Applied Physics >Injection charge dynamics on the Pb(Zr_(0.52)Ti_(0.48))O_3 surface by scanning probe microscopy
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Injection charge dynamics on the Pb(Zr_(0.52)Ti_(0.48))O_3 surface by scanning probe microscopy

机译:通过扫描探针显微镜注射PB上的注射电荷动力学(Zr_(0.52)Ti_(0.48))O_3表面

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摘要

The origin of an injected charge and its temperature dependence in ferroelectric Pb(Zr_(0.52)Ti_(0.48))O_3 (PZT) thin films is studied by multimode scanning probe microscopy. During the poling process in scanning probe microscope (SPM) measurement, which is a local bias applied by using a conductive tip on a film's surface to induce polarization orientation, a strong charge injection is always observed in oxide ferroelectric films; therefore, the surface potential is dominated by injection charge rather than polarization and screening charge. The surface potential shows an increase with the increase in the applied bias and saturation at a higher bias, which is much higher than the coercive field in PZT films. The positive surface potential shows a clear increase after oxygen plasma treatment, suggesting that the injection behavior is significantly enhanced. Subsequent heating could recover the surface condition to the initial state. Charge injection could be weakened but could not be completely eliminated by heat treatment. The current results suggest that charge injection behavior could not be easily relaxed, and a careful control of the localized poling process using an SPM conductive tip is required especially for studying the charge state on the surfaces of ferroelectric thin films.
机译:通过多模扫描探针显微镜研究注入电荷的起源及其在铁电Pb(Zr_(0.52)Ti_(0.48))O_3(PZT)薄膜中的起源。在扫描探针显微镜(SPM)测量中的抛光过程中,这是通过在薄膜表面上使用导电尖端施加的局部偏压以诱导偏振取向,在氧化物铁电膜中始终观察到强电荷注入;因此,表面电位通过喷射电荷而不是极化和筛分电荷来支配。表面电位显示随着较高偏差的施加偏差和饱和的增加而增加,该偏差远高于PZT薄膜中的矫顽磁场。阳性表面电位显示氧等离子体处理后明显增加,表明注射行为显着提高。随后的加热可以将表面状况恢复到初始状态。电荷注入可能会削弱,但不能通过热处理完全消除。目前的结果表明,需要易于放松电荷注射行为,并且需要使用SPM导电尖端的仔细控制局部极化处理,特别是用于研究铁电薄膜表面上的电荷状态。

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  • 来源
    《Journal of Applied Physics》 |2020年第18期|184104.1-184104.7|共7页
  • 作者单位

    Key Laboratory of Polar Materials and Devices (MOE) Department of Electronics East China Normal University Shanghai 200241 China;

    Key Laboratory of Polar Materials and Devices (MOE) Department of Electronics East China Normal University Shanghai 200241 China;

    Key Laboratory of Polar Materials and Devices (MOE) Department of Electronics East China Normal University Shanghai 200241 China;

    Key Laboratory of Polar Materials and Devices (MOE) Department of Electronics East China Normal University Shanghai 200241 China;

    Key Laboratory of Polar Materials and Devices (MOE) Department of Electronics East China Normal University Shanghai 200241 China Collaborative Innovation Center of Extreme Optics Shanxi University Shanxi 030006 China;

    Key Laboratory of Polar Materials and Devices (MOE) Department of Electronics East China Normal University Shanghai 200241 China Collaborative Innovation Center of Extreme Optics Shanxi University Shanxi 030006 China;

    Key Laboratory of Polar Materials and Devices (MOE) Department of Electronics East China Normal University Shanghai 200241 China Collaborative Innovation Center of Extreme Optics Shanxi University Shanxi 030006 China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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