机译:多层MOS_2和MOSE_2场效应晶体管1 / F噪声的实验和建模研究
School of Electrical and Computer Engineering Purdue University West Lafayette Indiana 47907 USA Birck Nanotechnology Center Purdue University West Lafayette Indiana 47907 USA;
Center for Integrated Nanotechnologies Sandia National Laboratories Albuquerque New Mexico 87185 USA;
Center for Integrated Nanotechnologies Sandia National Laboratories Albuquerque New Mexico 87185 USA;
Department of Industrial and Manufacturing Systems Engineering Kansas State University Manhattan Kansas 66506 USA Department of Electrical and Computer Engineering Kansas State University Manhattan Kansas 66506 USA;
School of Electrical and Computer Engineering Purdue University West Lafayette Indiana 47907 USA Birck Nanotechnology Center Purdue University West Lafayette Indiana 47907 USA;
机译:化学合成和剥离的多层MoS_2场效应晶体管的比较研究
机译:定量,实验验证的MOS_2纳米梁肖特基场效应晶体管的型号,亚阈值到饱和度
机译:热激活陷阱电荷负责多层MoS_2场效应晶体管中的磁滞
机译:MOS_2负电容场效应晶体管中的低频噪声
机译:氧化锌,薄膜,场效应晶体管的行为建模以及像素驱动器,模拟放大器和低噪声RF放大器电路的设计。
机译:基于场效应晶体管和低频麦克风的驻极体的微机器麦克风的建模与可行性研究
机译:多层石墨烯的超低噪声场效应晶体管