机译:射频溅射沉积的ALN空置缺陷的退火行为和使用单高电香束研究的金属机蒸汽相外延
Division of Applied Physics Faculty of Pure and Applied Science University of Tsukuba Tsukuba Ibaraki 305-8573 Japan;
School of Engineering Mie University 1577 Kurimamachiya Tsu Mie 514-8507 Japan;
Strategic Planning Office for Regional Revitalization Mie University 1577 Kurimamachiya Tsu Mie 514-8507 Japan;
Institute of Multidisciplinary Research for Advanced Materials Tohoku University Sendai 980-8577 Japan;
Research Center for Computational Design of Advanced Functional Materials (CD-FMat) National Institute of Advanced;
Industrial Science and Technology (AIST) Tsukuba Ibaraki 305-8568 Japan;
Industrial Science and Technology (AIST) Tsukuba Ibaraki 305-8568 Japan;
Universitat der Bundeswehr Munchen Institut fur Angewandte Physik und Messtechnik 85577 Neubiberg Germany;
School of Engineering Mie University 1577 Kurimamachiya Tsu Mie 514-8507 Japan Physics Department E21 and Heinz Maier-Leibnitz Zentrum (MLZ) Technische Universitat Munchen 85748 Garching Germany;
机译:单能正电子束研究镁注入GaN中的空位缺陷及其退火行为
机译:单能正电子束研究离子注入GaN中空位型缺陷的退火性能
机译:单能正电子束探测金属触点与GaN界面附近空位型缺陷的退火行为
机译:金属有机气相外延生长GaAsN中的空位型缺陷
机译:金属有机气相外延沉积的砷化铟锰磁性半导体薄膜中的铁磁性。
机译:氢化物气相外延在(0001)AlN上成核并生长(10’11)半极性AlN
机译:用单能正电子束探测氨基分子束外延生长的Mg掺杂GaN中的空位型缺陷