Transient carrier dynamics of GaAs at room temperature

摘要

We use time-resolved optical reflectivity with femtosecond resolution to study the ultrafast dynamics of photoexcited carriers in bulk GaAs. We observe an emergence of short-lived excitons at room temperature right after photoexcitation, in terms of a sharp dip and sub-ps lifetime in the transient reflectivity changes, as long as the pump fluence increases above a critical value F_c. Our findings help understand ultrafast physics in this material.