Controlling surface temperature of substrates supported by carriers on dynamic gas cushions in process chamber of CVD reactor comprises varying gas stream producing gas cushions from average value of optically measured surface temperatures

摘要

Controlling the surface temperature of substrates supported by carriers on dynamic gas cushions in a process chamber of a CVD reactor comprises forming an average value from the optically measured surface temperatures; and controlling the heights of the gas cushions (8) by varying the gas streams producing the gas cushions so that the deviations in the measured surface temperatures lie within a prescribed temperature window. An Independent claim is also included for a CVD reactor comprising a measuring device with temperature sensors (3) for determining the surface temperatures of all the substrates (9), a temperature control device and gas control devices assigned to each substrate holder. Preferred Features: The average value corresponds to the theoretical substrate temperature value. The substrate holders are driven by the gas stream.