机译:在(001)-VO_2 / TiO_2薄膜中对外延应变状态和相变的厚度效应
Hefei Univ Technol Sch Elect Sci & Appl Phys Hefei 230009 Anhui Peoples R China;
Hefei Univ Technol Sch Elect Sci & Appl Phys Hefei 230009 Anhui Peoples R China;
Hefei Univ Technol Sch Elect Sci & Appl Phys Hefei 230009 Anhui Peoples R China;
Univ Sci & Technol China Natl Synchrotron Radiat Lab Hefei 230026 Anhui Peoples R China;
Univ Sci & Technol China Natl Synchrotron Radiat Lab Hefei 230026 Anhui Peoples R China;
Hefei Univ Technol Sch Elect Sci & Appl Phys Hefei 230009 Anhui Peoples R China;
Chinese Acad Sci Shanghai Inst Appl Phys Shanghai Synchrotron Radiat Facil Shanghai 201204 Peoples R China;
Chinese Acad Sci Shanghai Inst Appl Phys Shanghai Synchrotron Radiat Facil Shanghai 201204 Peoples R China;
Chinese Acad Sci Shanghai Inst Appl Phys Shanghai Synchrotron Radiat Facil Shanghai 201204 Peoples R China;
Chinese Acad Sci Shanghai Inst Appl Phys Shanghai Synchrotron Radiat Facil Shanghai 201204 Peoples R China;
机译:厚度对(001)-VO_2 / TiO_2薄膜中外延应变状态和相变的影响
机译:外延VO_2 / TiO_2薄膜中位错附近的局部相变行为的可视化
机译:vo_2 / TiO_2外延膜的金属绝缘体转变的应变工程取决于钒二聚体的应变状态
机译:外延VO_2薄膜中薄膜厚度变化介导的界面应变交叉
机译:Heusler型单晶铁磁形状记忆薄膜的分子束外延生长和相变行为。
机译:研究(010)-VO2 /(001)-YSZ外延薄膜中的金属-绝缘体转变和结构相变
机译:厚度对外延(001)和(110)La2 / 3Ca1 / 3MnO3薄膜中阳离子偏析的影响