Influence of Frenkel defects on endurance behavior in SnO_2:Cu memristors

摘要

SnO2:Cu memristor devices were fabricated to investigate the influence of Frenkel defects on endurance behavior. We controlled the oxygen pressure during pulsed laser deposition to obtain different Frenkel defect conditions. For SnO2:Cu devices with homogeneous Frenkel defects, high-resistance state (HRS) fatigue was observed with increasing switching cycles due to the reduction of interfacial barriers caused by unrecoverable fragments of conductive filaments. In bilayer SnO2:Cu devices with Frenkel defect concentration gradients, the vertical Fick force resulting from the concentration gradient can drive mobile oxygen ions to restrain the formation of unrecoverable fragments. Thus, HRS fatigue was improved by restraining the reduction of interfacial barriers. When the gradient becomes large, the bilayer devices demonstrate HRS rise and stuck switching in several switching cycles. In this case, the Fick force may dominate the diffusion of mobile oxygen ions, leading to the overfilling of oxygen vacancies at the interface and an increase in interfacial barriers. Published under license by AIP Publishing.