Damage accumulation in Si during high-dose self-ion implantation

摘要

Accumulation and annealing of damage in Si implanted with self-ions to high doses were investigated using a combination of grazing incidence diffuse x-ray scattering, high-resolution x-ray diffraction scans, and transmission electron microscopy. During implantation at 100degreesC, small vacancy and interstitial clusters formed at low doses, but their concentrations saturated after a dose of approximate to3x10(14) cm(-2). The concentration of Frenkel defects at this stage of the implantation was approximate to1x10(-3). At doses above 1x10(15) cm(-2), the concentration of implanted interstitial atoms began to exceed the Frenkel pair concentration, causing the interstitial clusters to grow, and by approximate to3x10(15) cm(-2), these clusters formed dislocation loops. Kinematical analysis of the rocking curves illustrated that at doses above 1x10(15) cm(-2) the "plus one" model was well obeyed, with one interstitial atom being added to the dislocation loops for every implanted Si atom. Measurements of Huang scattering during isochronal annealing showed that annealing was substantial below 700degreesC for the specimens irradiated to lower doses, but that little annealing occurred in the other samples owing to the large imbalance between interstitial and vacancy defects. Between 700 and 900degreesC a large increase in the size of the interstitial clusters was observed, particularly in the low-dose samples. Above 900degreesC, the interstitial clusters annealed. (C) 2004 American Institute of Physics.