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首页> 外文期刊>Journal of Applied Physics >ac impedance techniques to study oxidation process of tunnel barriers in CoFe-AlO_x-CoFe magnetic tunnel junctions
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ac impedance techniques to study oxidation process of tunnel barriers in CoFe-AlO_x-CoFe magnetic tunnel junctions

机译:交流阻抗技术研究CoFe-AlO_x-CoFe磁性隧道结中隧道势垒的氧化过程

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摘要

The complex impedance spectra of CoFe-AlO_x-CoFe tunnel junctions with under-, proper-, and overoxidized tunnel barriers have been investigated by ac impedance techniques. Two sets of parallel resistance (R) and capacitance (C) elements and a R element in series, modeling the impedance contributions of the metal-oxide interfaces and bulk insulating layers, are employed to describe the impedance spectra of under- and proper-oxidized junctions. This model, however, reveals a discrepancy for overoxidized junctions. This discrepancy can be reconciled by including a third set of parallel RC element, which suggests the appearance of overoxidized CoFeO_x layer upon the bottom electrode. From further analysis of interfacial capacitance as a function of oxidation time, the bottom interfacial capacitance widely diverges from the top interfacial capacitance and can be related to the oxidation process of tunnel barrier. The analyzing results of impedance technique are also consistent with the results by complex capacitance technique.
机译:通过交流阻抗技术研究了具有不足,适当和过氧化的隧道势垒的CoFe-AlO_x-CoFe隧道结的复阻抗谱。使用两组并联的电阻(R)和电容(C)元件以及一个串联的R元件,对金属氧化物界面和体绝缘层的阻抗贡献进行建模,以描述欠氧化和适当氧化的阻抗谱路口。然而,该模型揭示了过氧化连接的差异。这种差异可以通过包括第三组平行RC元素来解决,这表明在底部电极上出现了过氧化的CoFeO_x层。通过进一步分析作为氧化时间的函数的界面电容,底部界面电容与顶部界面电容有很大差异,并且可能与隧道势垒的氧化过程有关。阻抗技术的分析结果也与复电容技术的分析结果一致。

著录项

  • 来源
    《Journal of Applied Physics》 |2005年第6期|p.064901.1-064901.4|共4页
  • 作者

    J. C. A. Huang; C. Y. Hsu;

  • 作者单位

    Department of Physics, National Cheng Kung University, Tainan 701, Taiwan, Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用物理学;计量学;
  • 关键词

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