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Barrier oxidation related paradigmatic transport behavior of magnetic tunnel junctions.

机译:势垒氧化与磁性隧道结的范式运输行为有关。

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摘要

Rapid implementation of a magnetic tunnel junction (MTJ) in magnetic sensors and memories is expected in the foreseeable future. Fabrication of ultra thin barriers, typically accomplished by deposition of an Al layer followed by in-situ natural or plasma oxidation, is the most critical step in achieving high quality MTJs. In this dissertation, we address some issues related to the barrier oxidation process, which may profoundly affect the quality of MTJs.; We first describe the systematic increase of the exchange bias Hex in the NiFe seed layer underneath the FeMn antiferromagnet during plasma oxidation of tunnel barrier. The increase in H ex was found to closely correlate with barrier oxidation rate. Based on the model of oxidation by cation current proposed by Cabrera and Mott, we propose that the increase in Hex stems from the ferromagnet/antiferromagnet interface modulation incurred by the diffusion of metals in multilayers underneath the tunnel barrier.; We then discuss the paradigmatic behavior of MTJs with under- and over-oxidized tunnel barriers. For the strongly over-oxidized case, the junctions exhibited zero bias anomalies (giant conductance dip or equivalently, giant resistance peak) in dynamic conductance curves, and striking bias and temperature dependencies of TMR, i.e. suppression of TMR at zero bias and the decrease of TMR with decreasing temperature. Logarithmic dependencies of the conductance on bias and temperature agree well with Applebaum's theory describing Kodno-type spin flip scattering between tunneling electrons and impurity spins. These results confirm that an over-oxidation of the tunnel barrier leads to diffusion of Co (Fe) ions from the bottom electrode into the barrier.; For the under-oxidized case, TMR of the junctions showed unusually strong bias and temperature dependencies. TMR was found to decrease more rapidly with increasing temperature and bias. We attribute this to the interface mixing at the CoFe/Al interface, leading to magnon assisted tunneling to occur at much lower energy scales as manifested by inelastic electron tunneling spectroscopy (IETS). Proper or over-oxidation of the barrier seems to cure the interface mixing, by driving Al in the mixed region to diffuse back to the barrier during oxidation, thereby eliminating the unusual magnon features.
机译:在可预见的将来,有望在磁传感器和存储器中快速实现磁隧道结(MTJ)。超薄阻挡层的制造通常是通过沉积Al层,然后进行就地自然氧化或等离子氧化来完成的,这是获得高质量MTJ的最关键步骤。本文探讨了与势垒氧化过程有关的一些问题,这些问题可能会深刻影响MTJ的质量。我们首先描述了隧道势垒等离子体氧化过程中,FeMn反铁磁体下面的NiFe晶种层中交换偏压 H ex 的系统增加。发现 H ex 的增加与势垒氧化速率密切相关。基于Cabrera和Mott提出的阳离子电流氧化模型,我们认为 H ex 的增加是由于铁磁/反铁磁界面扩散引起的。隧道势垒下方的多层金属。然后,我们讨论具有不足和过度氧化的隧道壁垒的MTJ的范式行为。对于强度过氧化的情况,在动态电导曲线中,结表现出零偏置异常(巨电导下降或等效,巨大的电阻峰值),并且TMR具有明显的偏置和温度依赖性,即在零偏置时抑制TMR且TMR降低。 TMR随着温度降低。电导对偏置和温度的对数依赖性与Applebaum的理论非常吻合,该理论描述了隧穿电子与杂质自旋之间的科德诺型自旋翻转散射。这些结果证实了隧道势垒的过度氧化导致Co(Fe)离子从底部电极扩散到势垒中。对于氧化不足的情况,结的TMR显示出异常强的偏置和温度依赖性。发现TMR随着温度和偏压的增加而更快地降低。我们将其归因于CoFe / Al界面处的界面混合,从而导致磁振子辅助隧穿发生在低得多的能量尺度上,这通过非弹性电子隧穿光谱(IETS)得以证明。阻挡层的适当或过度氧化似乎可以通过驱动混合区域中的Al在氧化过程中扩散回阻挡层来治愈界面混合,从而消除异常的磁振子特征。

著录项

  • 作者

    Bae, Seung-Young.;

  • 作者单位

    Stanford University.;

  • 授予单位 Stanford University.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2002
  • 页码 137 p.
  • 总页数 137
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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