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首页> 外文期刊>Journal of Applied Physics >Rear surface spallation on single-crystal silicon in nanosecond laser micromachining
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Rear surface spallation on single-crystal silicon in nanosecond laser micromachining

机译:纳秒激光微加工中单晶硅上的后表面剥落

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摘要

Rear surface spallation of single-crystal silicon under 5-ns laser pulse ablation at intensities of 0.6-60 GW/cm~2 is studied through postablation examination of the ablated samples. The spallation threshold energy and the spallation depth's dependences on the energy and target thickness are measured. From the linear relation between the spallation threshold energy and the target thickness, an estimation of the material spall strength around 1.4 GPa is obtained, in reasonable agreement with the spall strength estimation of 0.8-1.2 GPa at a strain rate of 10~7 s~(-1) using Grady's model for brittle materials. The experiment reveals the internal fracturing process over an extended zone in silicon, which is controlled by the competition between the shock pressure load and the laser ablation rate. The qualities of the laser microstructuring and micromachining results are greatly improved by using an acoustic impedance matching approach.
机译:通过对烧蚀样品进行后烧蚀研究,研究了在5ns激光脉冲烧蚀下强度为0.6-60 GW / cm〜2的单晶硅的后表面剥落。测量了散裂阈值能量和散裂深度对能量和目标厚度的依赖性。根据散裂阈值能量与目标厚度之间的线性关系,得出材料散裂强度的估算值约为1.4 GPa,与应变速率为10〜7 s〜时的散裂强度估算值0.8-1.2 GPa合理吻合。 (-1)将Grady模型用于脆性材料。实验揭示了在硅的扩展区域内的内部破裂过程,该过程由冲击压力载荷和激光烧蚀速率之间的竞争控制。通过使用声阻抗匹配方法,极大地提高了激光微结构化和微加工结果的质量。

著录项

  • 来源
    《Journal of Applied Physics 》 |2005年第10pt1期| p.104304.1-104304.4| 共4页
  • 作者单位

    Solid State Physics Laboratory, Electrical Engineering Department, Stanford University, California 94305;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用物理学 ;
  • 关键词

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