...
首页> 外文期刊>Journal of Applied Physics >Perpendicular giant magnetoresistance composed of [Co/Pt] multilayer and CoFe/TbCo
【24h】

Perpendicular giant magnetoresistance composed of [Co/Pt] multilayer and CoFe/TbCo

机译:由[Co / Pt]多层膜和CoFe / TbCo组成的垂直巨磁致电阻

获取原文
获取原文并翻译 | 示例

摘要

Perpendicular spin valves composed of [Co/Pt] multilayer and CoFe/TbCo bilayer were fabricated. The perpendicular giant magnetoresistance ratio of 4.8% was obtained with current-in-plane measurements. The interlayer coupling increased with increasing the net magnetization of CoFe/TbCo. We proposed a perpendicular pinning structure which possessed a high perpendicular coercivity (7000 Oe) but zero net moment. Consequently, the interlayer coupling between free and pinned layers can be significantly suppressed. This perpendicular pinning structure can be potentially used for high-density perpendicular magnetic random access memory cells.
机译:制造了由[Co / Pt]多层和CoFe / TbCo双层组成的垂直自旋阀。通过面内电流测量获得的垂直巨磁致电阻率为4.8%。层间耦合随着CoFe / TbCo净磁化强度的增加而增加。我们提出了一种垂直钉扎结构,该结构具有较高的垂直矫顽力(7000 Oe)但净矩为零。因此,可以显着抑制自由层和被钉扎层之间的层间耦合。该垂直钉扎结构可以潜在地用于高密度垂直磁性随机存取存储单元。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号