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首页> 外文期刊>Journal of Applied Physics >Inverse giant magnetoresistance in CoFe/Tb multilayer with perpendicular magnetic anisotropy
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Inverse giant magnetoresistance in CoFe/Tb multilayer with perpendicular magnetic anisotropy

机译:具有垂直磁各向异性的CoFe / Tb多层膜的逆巨磁电阻

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摘要

We detected inverse giant magnetoresistance (GMR) in a multilayer of Ta (4 nm)/[Tb (1.6 nm)/ CoFe (1.2 nm)]_5/Cu (3 nm)/[CoFe (1.2 nm)/Tb (0.6 nm)]_5/Ta (4 nm); both the bottom [Tb (1.6 nm)/CoFe (1.2 nm)]_5 and top [CoFe (1.2 nm)/Tb (0.6 nm)]_5 layers revealed a perpendicular magnetic anisotropy. Furthermore, depending on the Tb layer thickness, we confirmed the magnetization of the bottom CoFe layer to be either parallel or antiparallel to the applied field. Hence, the GMR behavior could be controlled by tuning the perpendicular magnetic anisotropy, i.e., it was switchable from inverse to normal GMR or from normal to inverse. Changes in GMR occurred at a compensation composition of CoFe and Tb for which no magnetization was observed due to antiferromagnetic cancellation of the Tb and CoFe moments.
机译:我们在Ta(4 nm)/ [Tb(1.6 nm)/ CoFe(1.2 nm)] _ 5 / Cu(3 nm)/ [CoFe(1.2 nm)/ Tb(0.6 nm)多层中检测到逆巨磁电阻(GMR) )] _ 5 / Ta(4 nm);底层[Tb(1.6 nm)/ CoFe(1.2 nm)] _ 5和顶层[CoFe(1.2 nm)/ Tb(0.6 nm)] _ 5均显示出垂直磁各向异性。此外,根据Tb层的厚度,我们确认了底部CoFe层的磁化强度与施加磁场平行或反平行。因此,可以通过调整垂直磁各向异性来控制GMR行为,即可以从反GMR切换为正常GMR,也可以从正GMR切换为反。 GMR的变化发生在CoFe和Tb的补偿成分中,由于Tb和CoFe力矩的反铁磁消除,未观察到磁化。

著录项

  • 来源
    《Journal of Applied Physics 》 |2011年第2期| p.07C119.1-07C119.3| 共3页
  • 作者单位

    Graduate Program of Photonics and Applied Physics, Gwangju Institute of Science and Technology (GIST),Gwangju 500-712, South Korea;

    School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju500-712, South Korea;

    School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju500-712, South Korea;

    Graduate Program of Photonics and Applied Physics, Gwangju Institute of Science and Technology (GIST),Gwangju 500-712, South Korea,School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju500-712, South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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