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TESTING CURRENT PERPENDICULAR TO PLANE GIANT MAGNETORESISTANCE MULTILAYER DEVICES

机译:测试垂直于巨型巨型磁阻多层器件的电流

摘要

A wafer suitable to be tested for current-perpendicular to the plane resistance includes a substrate, a conductive base layer on the substrate, a magnetic multilayer on the conductive base layer, and a top conductive layer. A testing ring is formed on the magnetic multilayer in a manner whereby it is separated from rest of the magnetic multilayer by a trench in the magnetic multilayer. Within the testing ring, the magnetic multilayer includes a hole. The current perpendicular to the plane resistance of the wafer may be determined by passing a predetermined current perpendicular through the testing ring by contacting a probe to the testing ring and measuring the voltage at the conductive base layer. The probe used in the present invention may be an AFM or a STM probe.
机译:适于测试垂直于平面电阻的电流的晶片包括基板,在基板上的导电基层,在导电基层上的磁性多层以及顶部导电层。测试环以这样的方式形成在磁性多层上,即,该测试环通过磁性多层中的沟槽与磁性多层的其余部分分开。在测试环内,磁性多层包括一个孔。垂直于晶片的平面电阻的电流可以通过使预定的垂直于测试环的电流通过,使探针接触测试环并测量导电基层上的电压来确定。用于本发明的探针可以是AFM或STM探针。

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