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首页> 外文期刊>Journal of Applied Physics >Effect of sulfurization conditions and post-deposition annealing treatment on structural and electrical properties of silver sulfide films
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Effect of sulfurization conditions and post-deposition annealing treatment on structural and electrical properties of silver sulfide films

机译:硫化条件和沉积后退火处理对硫化银膜结构和电性能的影响

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We examined the structural and electrical properties of silver sulfide films as a function of the sulfurization time of 70-nm-thick Ag films. Variations in the sulfurization time caused variations in the Ag/S atomic percentage ratio of the silver sulfide films, and as-grown films with various compositions, such as S-rich (Ag/S = 1.59), stoichiometric (Ag/S = 2), and Ag-rich (Ag/S = 2.16) films were formed. Amongst the various as-grown films, Ag ions existed in the most polarizable environment in the Ag-rich films. All the films existed in the acanthite α-phase, and the sulfurization conditions did not cause any drastic change in the preferred orientation of this phase. The resistivity of these films strongly depended on the Ag/S ratio. While the resistivity of stoichiometric or S-rich films was about 10~7-10~8 Ω cm, excess Ag of the Ag-rich film caused a decrease in the resistivity by four orders of magnitude. The Ag/S ratio also played a significant role in our observation of the change in resistance within the films from high- to low-resistance state and vice versa with the reversal of the bias polarity of the film. Distinct switching of the resistance was observed only for the Ag-rich film. We also examined the effects of post-deposition annealing (PDA) of various films at 190℃. PDA caused the formation of Ag-rich films (Ag/S=2.12-2.17) in all cases, and Ag ions existed in a more polarizable environment in all the films as compared with stoichiometric film. All the annealed films contained mixed acanthite α-phase and argentite β-phase. Furthermore, all the films had low resistivities of about 0.01-0.02 Ω cm, which indicated that the coexisting metallic argentite β-phase of the films significantly improved the conductivity of the films as compared to the as-grown film with similar Ag/S ratio. Clear switching behavior of the resistance could be observed within all the annealed films, thereby indicating that excess Ag in the silver sulfide films is a requirement for observation of such a phenomenon.
机译:我们研究了硫化银膜的结构和电学性能,其与70nm厚的Ag膜的硫化时间有关。硫化时间的变化会导致硫化银薄膜以及具有各种组成的成膜薄膜(例如富S(Ag / S = 1.59),化学计量(Ag / S = 2))的Ag / S原子百分比比率发生变化。 ),形成富银(Ag / S = 2.16)膜。在各种已成膜的薄膜中,Ag离子存在于富Ag薄膜中极性最强的环境中。所有的膜都存在于the石α相中,并且硫化条件没有引起该相的优选取向的任何急剧变化。这些膜的电阻率很大程度上取决于Ag / S比。虽然化学计量或富S膜的电阻率约为10〜7-10〜8Ωcm,但富Ag膜中过量的Ag导致电阻率降低了四个数量级。 Ag / S比在我们观察膜内电阻从高阻态变化到低阻态以及反之亦然的过程中也起着重要作用,反之亦然。仅在富银薄膜中观察到电阻的明显切换。我们还研究了各种膜在190℃下的沉积后退火(PDA)的影响。在所有情况下,PDA都会导致形成富Ag薄膜(Ag / S = 2.12-2.17),并且与化学计量薄膜相比,所有薄膜中的Ag离子都存在于更极化的环境中。所有的退火膜都包含混合的钙钛矿α相和银辉石β相。此外,所有薄膜均具有约0.01-0.02Ωcm的低电阻率,这表明与具有类似Ag / S比的成膜薄膜相比,薄膜中共存的金属银辉石β相显着提高了薄膜的电导率。 。在所有退火的薄膜中都可以观察到明显的电阻转换行为,从而表明观察到这种现象需要硫化银薄膜中过量的Ag。

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