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Magnetostrictive hysteresis of TbCo/CoFe multilayers and magnetic domains

机译:TbCo / CoFe多层膜和磁畴的磁致伸缩磁滞

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摘要

Magnetic and magnetostrictive hysteresis loops of TbCo/CoFe multilayers under field applied along the hard magnetization axis are studied using vectorial magnetization measurements, optical deflectometry, and magneto-optical Kerr microscopy. Even a very small angle misalignment between hard axis and magnetic field direction is shown to drastically change the shape of magnetization and magnetostrictive torsion hysteresis loops. Two kinds of magnetic domains are revealed during the magnetization: big regions with opposite rotation of spontaneous magnetization vector and spontaneous magnetic domains which appear in a narrow field interval and provide an inversion of this rotation. We show that the details of the hysteresis loops of our exchange-coupled films can be described using the classical model of homogeneous magnetization rotation of single uniaxial films and the configuration of observed domains. The understanding of these features is crucial for applications (for microelectromechanical systems or microactuators) which benefit from the greatly enhanced sensitivity near the point of magnetic saturation at the transverse applied field.
机译:使用矢量磁化测量,光学偏转和磁光Kerr显微镜研究了沿硬磁化轴施加的磁场下TbCo / CoFe多层膜的磁滞和磁致伸缩磁滞回线。甚至在硬轴和磁场方向之间的很小角度偏差也可以显着改变磁化和磁致伸缩扭转磁滞回线的形状。在磁化过程中揭示了两种磁畴:自发磁化矢量的相反旋转的大区域和出现在狭窄磁场间隔中并提供这种旋转反转的自发磁畴。我们表明,可以使用经典的单轴薄膜均匀磁化旋转模型和观察域的配置来描述我们的交换耦合薄膜的磁滞回线的细节。对这些特性的理解对于应用(对于微机电系统或微致动器)至关重要,因为这些应用得益于横向施加磁场处的磁饱和点附近的灵敏度大大提高。

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