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首页> 外文期刊>Journal of Applied Physics >Structural and thermoelectric properties of epitaxially grown Bi_2Te_3 thin films and superlattices
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Structural and thermoelectric properties of epitaxially grown Bi_2Te_3 thin films and superlattices

机译:外延生长的Bi_2Te_3薄膜和超晶格的结构和热电性能

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摘要

Multi-quantum-well structures of Bi_2Te_3 are predicted to have a high thermoelectric figure of merit ZT. Bi_2Te_3 thin films and Bi_2Te_3/Bi_2(Te_(0.88)Se_(0.12))_3 superlattices (SLs) were grown epitaxially by molecular beam epitaxy on BaF_2 substrates with periods of 12 and 6 nm, respectively. Reflection high-energy electron diffraction confirmed a layer-by-layer growth, x-ray diffraction yielded the lattice parameters and SL periods and proved epitaxial growth. The in-plane transport coefficients were measured and the thin films and SL had power factors between 28 and 35 μW/cm K~2. The lattice thermal conductivity varied between 1.60 W/mK for Bi_2Te_3 thin films and 1.01 W/mK for a 10 nm SL. The best figures of merit ZT were achieved for the SL; however, the values are slightly smaller than those in bulk materials. Thin films and superlattices were investigated in plan view and cross section by transmission electron microscopy. In the Bi_2Te_3 thin film and SL the dislocation density was found to be 2 X 10~(10) cm~(-2). Bending of the SL with amplitudes of 30 nm (12 nm SL) and 15 nm (6 nm SL) and a wavelength of 400 nm was determined. Threading dislocations were found with a density greater than 2 X 10~9 cm~(-2). The superlattice interfaces are strongly bent in the region of the threading dislocations, undisturbed regions have a maximum lateral sie of 500 nm. Thin films and SL showed a structural modulation [natural nanostructure (nns)] with a wavelength of 10 nm and a wave vector parallel to (1,0,10). This nns was also observed in Bi_2Te_3 bulk materials and turned out to be of general character for Bi_2Te_3. The effect of the microstructure on the thermoelectric properties is discussed. The microstructure is governed by the superlattice, the nns, and the dislocations that are present in the films. Our results indicate that the microstructure directly affects the lattice thermal conductivity. Thermopower and electrical conductivity were found to be negatively correlated and no clear dependence of the two quantities on the microstructure could be found.
机译:预测Bi_2Te_3的多量子阱结构具有较高的热电品质因数ZT。通过分子束外延分别在周期为12和6 nm的BaF_2衬底上外延生长Bi_2Te_3薄膜和Bi_2Te_3 / Bi_2(Te_(0.88)Se_(0.12))_ 3超晶格(SLs)。反射高能电子衍射证实了逐层生长,x射线衍射产生了晶格参数和SL周期,并证明了外延生长。测量面内传输系数,薄膜和SL的功率因数在28至35μW/ cm K〜2之间。对于Bi_2Te_3薄膜,晶格热导率在1.60 W / mK和10 nm SL的1.01 W / mK之间变化。 SL取得了ZT的最佳成绩;但是,该值比散装材料中的值略小。通过透射电子显微镜在平面图和横截面上研究薄膜和超晶格。在Bi_2Te_3薄膜和SL中,位错密度为2 X 10〜(10)cm〜(-2)。确定振幅为30 nm(12 nm SL)和15 nm(6 nm SL)且波长为400 nm的SL的弯曲。发现螺纹位错的密度大于2 X 10〜9 cm〜(-2)。超晶格界面在螺纹位错区域强烈弯曲,未受干扰的区域的最大横向尺寸为500 nm。薄膜和SL表现出结构调制[天然纳米结构(nns)],其波长为10 nm,波矢量平行于(1,0,10)。在Bi_2Te_3块状材料中也观察到该nns,结果证明它具有Bi_2Te_3的一般特征。讨论了微观结构对热电性能的影响。微观结构由薄膜中的超晶格,nns和位错控制。我们的结果表明,微观结构直接影响晶格的热导率。发现热功率和电导率呈负相关,并且未发现这两个量对微结构的明确依赖性。

著录项

  • 来源
    《Journal of Applied Physics》 |2006年第11期|p.114306.1-114306.10|共10页
  • 作者

    N. Peranio; O. Eibl; J. Nurnus;

  • 作者单位

    Institut fuer Angewandte Physik, Universitaet Tuebingen, Auf der Morgenstelle 10, D-72076 Tuebingen, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用物理学;计量学;
  • 关键词

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