Process control and melt depth homogenization for SiC-on-Si structures during flash lamp annealing by carbon implantation

摘要

Flash lamp annealing in the millisecond regime of heteroepitaxial silicon carbide on silicon structures involves melting the silicon below the SiC layer, but the deep faceted nature of the liquid-solid interface leads to unacceptable surface roughness. This paper describes a method of controlling melting by implanting a high dose of carbon at a controlled depth below the Si/SiC interface, which significantly alters the melting characteristics of the silicon. This technology has also been applied to SiC and Si multilayer heterostructures. Results confirm the effectiveness of this approach for increasing surface uniformity, making liquid phase processing compatible with standard device fabrication techniques. A thermal model has also been developed to describe this process and results indicate that the theoretical work is consistent with the experimental evidence. The model is a valuable tool for predicting the onset of melting, maximum temperatures, and process windows for controlled liquid phase epitaxy.