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首页> 外文期刊>Journal of Applied Physics >Cluster coarsening in zinc oxide thin films by postgrowth annealing
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Cluster coarsening in zinc oxide thin films by postgrowth annealing

机译:后生长退火法氧化锌薄膜的团簇粗化

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摘要

Postgrowth annealing was carried out on ZnO thin films grown by metal-organic chemical-vapor deposition. It was found from the scanning electron microscopy and atomic force microscopy measurements that the morphology of the thin films changed drastically after annealing. The as-grown thin films consist of fine nanoscale-sized sheets with random orientation. Upon annealing at 800℃, the ZnO nanosheets changed to three-dimensional nanoneedles. The different types of the mass transport mechanisms are discussed and correlated with the experimental results. A coarsening kinetics developed by Lifshitz and Slyozov [J. Phys. Chem. Solids 19, 35 (1961)] and Wagner [Z. Elektrochem. 65, 581 (1961)] was used to estimate the activation energy of the coarsening process. The activation energy of the Ostwald ripening in ZnO films was estimated in the first attempt, and the value is at around 1.33 eV. Hall effect and photoluminescence measurements were carried out to investigate the effect of coarsening on electrical and optical properties of the ZnO thin films.
机译:对通过金属有机化学气相沉积法生长的ZnO薄膜进行后生长退火。从扫描电子显微镜和原子力显微镜测量发现,退火后,薄膜的形态急剧变化。生长的薄膜由具有随机取向的细纳米级片组成。在800℃退火后,ZnO纳米片变为三维纳米针。讨论了不同类型的传质机理并将其与实验结果相关联。 Lifshitz和Slyozov提出的粗化动力学[J.物理化学Solids 19,35(1961)]和Wagner [Z. Elektrochem。 65,581(1961)]用于估计粗化过程的活化能。在第一次尝试中,估计了ZnO薄膜中Ostwald成熟的活化能,该值约为1.33 eV。进行霍尔效应和光致发光测量以研究粗糙化对ZnO薄膜的电学和光学性质的影响。

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